2SK2699 N-FET 600V 12A 150W 0.65E
€4,50
In stock
Description
– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 150 W
– Maximum Drain-Source Voltage |Vds|: 600 V
– Maximum Drain Current |Id|: 12 A
– Total Gate Charge Qg: 58 nC
– Maximum Drain-Source On-State Resistance Rds: 0.65 Ohm
– Package: SC65_TO3P
Specifications
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation Pd: 150 W
- Maximum Drain-Source Voltage |Vds|: 600 V
- Maximum Drain Current |Id|: 12 A
- Total Gate Charge Qg: 58 nC
- Maximum Drain-Source On-State Resistance Rds: 0.65 Ohm
- Package: SC65_TO3P
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
