2SK1358 TRANSISTOR

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 150 W
– Maximum Drain-Source Voltage |Vds|: 900 V
– Maximum Gate-Source Voltage |Vgs|: 30 V
– Maximum Drain Current |Id|: 9 A
– Maximum Junction Temperature Tj: 150 °C
– Total Gate Charge Qg: 120 nC
– Rise Time tr: 25 nS
– Drain-Source Capacitance Cd: 180 pF
– Maximum Drain-Source On-State Resistance Rds: 1.1 Ohm
– Package: SC-65