2SK3562 TRANSISTOR 6A 600V

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 40 W
– Maximum Drain-Source Voltage |Vds|: 600 V
– Maximum Gate-Source Voltage |Vgs|: 30 V
– Maximum Drain Current |Id|: 6 A
– Maximum Junction Temperature Tj: 150 °C
– Total Gate Charge Qg: 28 nC
– Rise Time tr: 20 nS
– Drain-Source Capacitance Cd: 110 pF
– Maximum Drain-Source On-State Resistance Rds: 1.25 Ohm
– Package: TO220SIS