– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 150 W
– Maximum Drain-Source Voltage |Vds|: 900 V
– Maximum Gate-Source Voltage |Vgs|: 20 V
– Maximum Drain Current |Id|: 5 A
– Maximum Junction Temperature Tj: 150 °C
– Rise Time tr: 110 nS
– Drain-Source Capacitance Cd: 190 pF
– Maximum Drain-Source On-State Resistance Rds: 2.5 Ohm
– Package: TO247AD
- Type of Transistor: MOSFET
- Type of Control Channel: N -Channel
- Maximum Power Dissipation Pd: 150 W
- Maximum Drain-Source Voltage |Vds|: 900 V
- Maximum Gate-Source Voltage |Vgs|: 20 V
- Maximum Drain Current |Id|: 5 A
- Maximum Junction Temperature Tj: 150 °C
- Rise Time tr: 110 nS
- Drain-Source Capacitance Cd: 190 pF
- Maximum Drain-Source On-State Resistance Rds: 2.5 Ohm
- Package: TO247AD
