2SJ306 TRANSISTOR

– Type of Transistor: MOSFET
– Type of Control Channel: P -Channel
– Maximum Power Dissipation Pd: 25 W
– Maximum Drain-Source Voltage |Vds|: 250 V
– Maximum Gate-Source Voltage |Vgs|: 30 V
– Maximum Drain Current |Id|: 3 A
– Maximum Junction Temperature Tj: 150 °C
– Rise Time tr: 18 nS
– Drain-Source Capacitance Cd: 110 pF
– Maximum Drain-Source On-State Resistance Rds: 1.5 Ohm
– Package: TO-220ML