2SK3563 TRANSISTOR MOSFET

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 35 W
– Maximum Drain-Source Voltage |Vds|: 500 V
– Maximum Gate-Source Voltage |Vgs|: 30 V
– Maximum Drain Current |Id|: 5 A
– Maximum Junction Temperature Tj: 150 °C
– Rise Time tr: 10 nS
– Drain-Source Capacitance Cd: 70 pF
– Maximum Drain-Source On-State Resistance Rds: 1.5 Ohm
– Package: TO220SIS