STP12NK80Z N-MOSFET Transistor 800V 6.6A 190W

– Manufacturer: ST MICROELECTRONICS
– Type of transistor: N-MOSFET
– Technology: SuperMesh™
– Polarisation: unipolar
– Drain-source voltage: 800V
– Drain current: 6.6A
– Power dissipation: 190W
– Case: TO220-3
– Gate-source voltage: ±30V
– On-state resistance: 750mΩ
– Mounting: THT
– Kind of package: tube
– Features of semiconductor devices: ESD protected gate

Additional information
– Gross weight: 2.03 g