STP20N65M5 Transistor N-MOSFET 650V 11.3A 130W

5,90

Out of stock

Description

– Manufacturer: ST MICROELECTRONICS
– Type of transistor: N-MOSFET
– Technology: SuperMesh™
– Polarisation: unipolar
– Drain-source voltage: 650V
– Drain current: 11.3A
– Power dissipation: 130W
– Case: TO220-3
– Gate-source voltage: ±25V
– On-state resistance: 190mΩ
– Mounting: THT
– Features of semiconductor devices: ESD protected gate

Additional information
– Gross weight: 2 g

Specifications

- Manufacturer: ST MICROELECTRONICS
- Type of transistor: N-MOSFET
- Technology: SuperMesh™
- Polarisation: unipolar
- Drain-source voltage: 650V
- Drain current: 11.3A
- Power dissipation: 130W
- Case: TO220-3
- Gate-source voltage: ±25V
- On-state resistance: 190mΩ
- Mounting: THT
- Features of semiconductor devices: ESD protected gate

Additional information
- Gross weight: 2 g

Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg