IPP60R360 N-MOSFET 600V 6A 41W

– Manufacturer: INFINEON TECHNOLOGIES
– Type of transistor: N-MOSFET
– Technology: CoolMOS™ P7
– Polarisation: unipolar
– Drain-source voltage: 600V
– Drain current: 6A
– Power dissipation: 41W
– Case: PG-TO220-3
– Gate-source voltage: ±20V
– On-state resistance: 0.36Ω
– Mounting: THT
– Gate charge: 13nC
– Kind of channel: enhanced
– Features of semiconductor devices: ESD protected gate

Additional information
– Gross weight: 2.06 g