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IXBH16N170A IGBT 1.7KV 10A 150W
€30,00
Out of stock
Description
– Manufacturer: IXYS
– Type of transistor: IGBT
– Technology: BiMOSFET™
– Collector-emitter voltage: 1.7kV
– Collector current: 10A
– Power dissipation: 150W
– Case: TO247-3
– Gate-emitter voltage: ±20V
– Pulsed collector current: 40A
– Mounting: THT
– Gate charge: 65nC
– Turn-on time: 43ns
– Turn-off time: 370ns
– Features of semiconductor devices: high voltage
Specifications
- Manufacturer: IXYS
- Type of transistor: IGBT
- Technology: BiMOSFET™
- Collector-emitter voltage: 1.7kV
- Collector current: 10A
- Power dissipation: 150W
- Case: TO247-3
- Gate-emitter voltage: ±20V
- Pulsed collector current: 40A
- Mounting: THT
- Gate charge: 65nC
- Turn-on time: 43ns
- Turn-off time: 370ns
- Features of semiconductor devices: high voltage
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
