IRFB4227PBF TRS N-MOSFET 200V 18A 150W
€6,00
In stock
Description
– Manufacturer: INFINEON TECHNOLOGIES
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 200V
– Drain current: 65A
– Power dissipation: 190W
– Case: TO220AB
– Gate-source voltage: ±30V
– On-state resistance: 26mΩ
– Mounting: THT
– Gate charge: 70nC
– Kind of channel: enhanced
Specifications
- Manufacturer: INFINEON TECHNOLOGIES
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 200V
- Drain current: 65A
- Power dissipation: 190W
- Case: TO220AB
- Gate-source voltage: ±30V
- On-state resistance: 26mΩ
- Mounting: THT
- Gate charge: 70nC
- Kind of channel: enhanced
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
