IRL3705NPBF N-MOSFET 55V 89A 130W TO220AB

3,50

In stock

Description

– Manufacturer: INFINEON TECHNOLOGIES
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 55V
– Drain current: 89A
– Power dissipation: 130W
– Case: TO220AB
– Gate-source voltage: ±16V
– On-state resistance: 10mΩ
– Mounting: THT
– Gate charge: 65.3nC
– Kind of channel: enhanced
– Features of semiconductor devices: logic level

Specifications

- Manufacturer: INFINEON TECHNOLOGIES
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 55V
- Drain current: 89A
- Power dissipation: 130W
- Case: TO220AB
- Gate-source voltage: ±16V
- On-state resistance: 10mΩ
- Mounting: THT
- Gate charge: 65.3nC
- Kind of channel: enhanced
- Features of semiconductor devices: logic level

Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg