2N3958 TRANSISTOR

6,00

Out of stock

SKU: 2N3958 Category: Tag:
Description

The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. The 2N3958 features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The 2N3958 is ideal for: 1Wideband Differential Amps 2High-Speed, Temp-Compensated, Single-Ended Input Amps 3High Speed Comparators 4Impedance Converters.
Parametrics

2N3958 absolute maximum ratings: 1Gate-Drain, Gate-Source Voltage: –50 V 2Gate Current: 50 mA 3Lead Temperature 1/16 from case for 10 sec.: 300 ℃ 4Storage Temperature: –65 to 200℃ 5Operating Junction Temperature: –55 to 150℃ 6Power Dissipation : Per Side: 250 mW Total: 500 mW.
Features

2N3958 features:1Monolithic Design 2High Slew Rate 3Low Offset/Drift Voltage 4Low Gate Leakage: 5 pA 5Low Noise: 9 nV√Hz 6High CMRR: 100 dB.

Specifications

The low cost 2N3958 JFET dual is designed for high-performance differential amplification for a wide range of precision test instrumentation applications. The 2N3958 features tightly matched specs, low gate leakage for accuracy, and wide dynamic range with IG guaranteed at VDG = 20 V. The 2N3958 is ideal for: 1Wideband Differential Amps 2High-Speed, Temp-Compensated, Single-Ended Input Amps 3High Speed Comparators 4Impedance Converters.
Parametrics

2N3958 absolute maximum ratings: 1Gate-Drain, Gate-Source Voltage: –50 V 2Gate Current: 50 mA 3Lead Temperature 1/16 from case for 10 sec.: 300 ℃ 4Storage Temperature: –65 to 200℃ 5Operating Junction Temperature: –55 to 150℃ 6Power Dissipation : Per Side: 250 mW Total: 500 mW.
Features

2N3958 features:1Monolithic Design 2High Slew Rate 3Low Offset/Drift Voltage 4Low Gate Leakage: 5 pA 5Low Noise: 9 nV√Hz 6High CMRR: 100 dB.

Packaging
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