2SK1094 TRANSISTOR MOS-N-FET 60 V, 15 A, 25 W

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 25 W
– Maximum Drain-Source Voltage |Vds|: 60 V
– Maximum Gate-Source Voltage |Vgs|: 20 V
– Maximum Drain Current |Id|: 15 A
– Maximum Junction Temperature Tj: 150 °C
– Rise Time tr: 70 nS
– Drain-Source Capacitance Cd: 450 pF
– Maximum Drain-Source On-State Resistance Rds: 0.055 Ohm
– Package: TO220FM