2SK1119 TRANSISTOR 1000V, 4A, 100W

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 100 W
– Maximum Drain-Source Voltage |Vds|: 1000 V
– Maximum Gate-Source Voltage |Vgs|: 20 V
– Maximum Gate-Threshold Voltage |Vgsth|: 3.5 V
– Maximum Drain Current |Id|: 4 A
– Maximum Junction Temperature Tj: 150 °C
– Total Gate Charge Qg: 60 nC
– Maximum Drain-Source On-State Resistance Rds: 3.8 Ohm
– Package: TO220AB