2SK2645 TRANSISTOR FET 600V 9A 50W

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 50 W
– Maximum Drain-Source Voltage |Vds|: 600 V
– Maximum Gate-Source Voltage |Vgs|: 30 V
– Maximum Drain Current |Id|: 9 A
– Maximum Junction Temperature Tj: 150 °C
– Rise Time tr: 70 nS
– Drain-Source Capacitance Cd: 150 pF
– Maximum Drain-Source On-State Resistance Rds: 1 Ohm
– Package: TO220F15