2SK4111 MOS-FET 45W 600V N-CHANNEL T0220N
€3,00
In stock
Description
– Low drain-source ON resistance: RDS ON = 0.54 Ω typ.
– High forward transfer admittance: |Yfs| = 8.5S typ.
– Low leakage current: IDSS = 100 μA max VDS = 600 V
– Enhancement mode: Vth = 2.0 to 4.0 V VDS = 10 V, ID = 1 mA
Specifications
- Low drain-source ON resistance: RDS ON = 0.54 Ω typ.
- High forward transfer admittance: |Yfs| = 8.5S typ.
- Low leakage current: IDSS = 100 μA max VDS = 600 V
- Enhancement mode: Vth = 2.0 to 4.0 V VDS = 10 V, ID = 1 mA
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
