2SK955 TRANSISTOR

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 125 W
– Maximum Drain-Source Voltage |Vds|: 800 V
– Maximum Gate-Source Voltage |Vgs|: 20 V
– Maximum Drain Current |Id|: 5 A
– Maximum Junction Temperature Tj: 150 °C
– Drain-Source Capacitance Cd: 2400 pF
– Maximum Drain-Source On-State Resistance Rds: 2 Ohm
– Package: TO247