Type Designator: BF494
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation Pc: 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature Tj: 150 °C
Transition Frequency ft: 260 MHz
Collector Capacitance Cc: 1.6 pF
Forward Current Transfer Ratio hFE, MIN: 115
Noise Figure, dB: –
Package: TO92
Type Designator: BF494
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation Pc: 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature Tj: 150 °C
Transition Frequency ft: 260 MHz
Collector Capacitance Cc: 1.6 pF
Forward Current Transfer Ratio hFE, MIN: 115
Noise Figure, dB: -
Package: TO92
