BSP135H6327XTS N-MOSFET 600V 0.12A 1.8W
€2,75
In stock
Description
– Manufacturer: INFINEON TECHNOLOGIES
– Type of transistor: N-MOSFET
– Technology: SIPMOS™
– Polarisation: unipolar
– Drain-source voltage: 600V
– Drain current: 0.12A
– Power dissipation: 1.8W
– Case: SOT223
– Gate-source voltage: ±20V
– On-state resistance: 60Ω
– Mounting: SMD
– Kind of channel: depleted
Additional information
– Gross weight: 0.152 g
Specifications
- Manufacturer: INFINEON TECHNOLOGIES
- Type of transistor: N-MOSFET
- Technology: SIPMOS™
- Polarisation: unipolar
- Drain-source voltage: 600V
- Drain current: 0.12A
- Power dissipation: 1.8W
- Case: SOT223
- Gate-source voltage: ±20V
- On-state resistance: 60Ω
- Mounting: SMD
- Kind of channel: depleted
Additional information
- Gross weight: 0.152 g
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
