FQPF2N60C N-MOSFET transistor 600V 1.35A 23W TO220FP

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In stock

Description

– Manufacturer: ON SEMICONDUCTOR
– Type of transistor: N-MOSFET
– Technology: QFET®
– Polarisation: unipolar
– Drain-source voltage: 600V
– Drain current: 1.35A
– Power dissipation: 23W
– Case: TO220FP
– Gate-source voltage: ±30V
– On-state resistance: 4.7Ω
– Mounting: THT
– Gate charge: 12nC
– Kind of channel: enhanced

Additional information
– Gross weight: 2.22 g

Specifications

- Manufacturer: ON SEMICONDUCTOR
- Type of transistor: N-MOSFET
- Technology: QFET®
- Polarisation: unipolar
- Drain-source voltage: 600V
- Drain current: 1.35A
- Power dissipation: 23W
- Case: TO220FP
- Gate-source voltage: ±30V
- On-state resistance: 4.7Ω
- Mounting: THT
- Gate charge: 12nC
- Kind of channel: enhanced

Additional information
- Gross weight: 2.22 g

Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg