Infineon IGW30N60H3 IGBT Transistor, 600 V, 30 A, TO-247-3
€5,50
In stock
Manufacturer: Infineon Technologies
Manufacturer part number: IGW30N60H3FKSA1
Transistor type: IGBT
Collector-emitter voltage: 600 V
Collector current: 30 A
Power dissipation: 187 W
Package: TO-247-3
Gate-emitter voltage: ±20 V
Mounting: THT / through hole
Supplier product code: IGW30N60H3
RoHS: compliant, as stated on supplier invoice
Country of origin: China, as stated on supplier invoice
Sold individually.
Manufacturer datasheet: https://www.infineon.com/assets/row/public/documents/non-assigned/49/infineon-igw30n60h3-datasheet-en.pdf
Infineon IGW30N60H3 is a through-hole IGBT power transistor in a TO-247-3 package. Rated collector-emitter voltage: 600 V collector current: 30 A power dissipation: 187 W. Manufacturer part number: IGW30N60H3FKSA1. Verify the original circuit requirements and the manufacturer datasheet before selecting a replacement. Sold individually.
Infineon IGW30N60H3 is a through-hole IGBT power transistor in a TO-247-3 package. Rated collector-emitter voltage: 600 V collector current: 30 A power dissipation: 187 W. Manufacturer part number: IGW30N60H3FKSA1. Verify the original circuit requirements and the manufacturer datasheet before selecting a replacement. Sold individually.
