IPA60R360PSXKSA1 N-MOSFET 650V 6A TO220FP ESD

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In stock

Description

– Manufacturer: INFINEON TECHNOLOGIES
– Type of transistor: N-MOSFET
– Technology: CoolMOS™ P7
– Polarisation: unipolar
– Drain-source voltage: 650V
– Drain current: 6A
– Pulsed drain current: 26A
– Power dissipation: 22W
– Case: TO220FP
– Gate-source voltage: ±20V
– On-state resistance: 0.36Ω
– Mounting: THT
– Kind of channel: enhancement
– Version: ESD

Specifications

- Manufacturer: INFINEON TECHNOLOGIES
- Type of transistor: N-MOSFET
- Technology: CoolMOS™ P7
- Polarisation: unipolar
- Drain-source voltage: 650V
- Drain current: 6A
- Pulsed drain current: 26A
- Power dissipation: 22W
- Case: TO220FP
- Gate-source voltage: ±20V
- On-state resistance: 0.36Ω
- Mounting: THT
- Kind of channel: enhancement
- Version: ESD

Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg