IRFB3306PBF N-MOSFET 60V 160A 230V TO220A
€2,60
In stock
Description
– Manufacturer: INFINEON TECHNOLOGIES
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 60V
– Drain current: 160A
– Power dissipation: 230W
– Case: TO220AB
– Gate-source voltage: ±20V
– On-state resistance: 4.2mΩ
– Mounting: THT
– Gate charge: 85nC
– Kind of channel: enhanced
Specifications
- Manufacturer: INFINEON TECHNOLOGIES
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 60V
- Drain current: 160A
- Power dissipation: 230W
- Case: TO220AB
- Gate-source voltage: ±20V
- On-state resistance: 4.2mΩ
- Mounting: THT
- Gate charge: 85nC
- Kind of channel: enhanced
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
