IRFB4229PBF N-MOSFET transistor 250V 46A 330W

6,25

In stock

Description

– Manufacturer: Infineon IRF
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 250V
– Drain current: 46A
– Power dissipation: 330W
– Case: TO220AB
– Gate-source voltage: ±30V
– On-state resistance: 46mΩ
– Mounting: THT
– Gate charge: 72nC

Additional information
– Gross weight: 1.938 g

Specifications

- Manufacturer: Infineon IRF
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 250V
- Drain current: 46A
- Power dissipation: 330W
- Case: TO220AB
- Gate-source voltage: ±30V
- On-state resistance: 46mΩ
- Mounting: THT
- Gate charge: 72nC

Additional information
- Gross weight: 1.938 g

Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg