IRFBE30 N-MOSFET 800V 2.6A 125W
€2,65
In stock
Description
– Manufacturer: VISHAY
– Type of transistor: N-MOSFET
– Polarisation: unipolar
– Drain-source voltage: 800V
– Drain current: 2.6A
– Power dissipation: 125W
– Case: TO220AB
– Gate-source voltage: ±20V
– On-state resistance: 3Ω
– Mounting: THT
– Gate charge: 78nC
– Kind of channel: enhanced
Additional information
– Gross weight: 1.967 g
Specifications
- Manufacturer: VISHAY
- Type of transistor: N-MOSFET
- Polarisation: unipolar
- Drain-source voltage: 800V
- Drain current: 2.6A
- Power dissipation: 125W
- Case: TO220AB
- Gate-source voltage: ±20V
- On-state resistance: 3Ω
- Mounting: THT
- Gate charge: 78nC
- Kind of channel: enhanced
Additional information
- Gross weight: 1.967 g
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
