IXFH18N60X N-MOSFET 600V 18A 320W

– Manufacturer: IXYS
– Type of transistor: N-MOSFET
– Polarisation: unipolar
– Drain-source voltage: 600V
– Drain current: 18A
– Power dissipation: 320W
– Case: TO247-3
– On-state resistance: 230mΩ
– Mounting: THT
– Gate charge: 35nC
– Kind of channel: enhanced
– Features of semiconductor devices: ultra junction x-class
– Reverse recovery time: 127ns

Additional information
– Gross weight: 6.07 g