RFB4110PBF N-MOSFET 100V 130A 370W TO220B
€3,60
In stock
Description
– Manufacturer: INFINEON TECHNOLOGIES
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 100V
– Drain current: 130A
– Power dissipation: 370W
– Case: TO220AB
– Gate-source voltage: ±20V
– On-state resistance: 4.5mΩ
– Mounting: THT
– Gate charge: 150nC
– Kind of channel: enhancement
Specifications
- Manufacturer: INFINEON TECHNOLOGIES
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 100V
- Drain current: 130A
- Power dissipation: 370W
- Case: TO220AB
- Gate-source voltage: ±20V
- On-state resistance: 4.5mΩ
- Mounting: THT
- Gate charge: 150nC
- Kind of channel: enhancement
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
