SI4925DDY-T1-GE3 SMD P-MOSFET 30V 5.9A 5W
€2,00
In stock
Description
– Manufacturer: VISHAY
– Type of transistor: P-MOSFET x2
– Polarisation: unipolar
– Drain-source voltage: -30V
– Drain current: -5.9A
– Power dissipation: 5W
– Case: SO8
– Gate-source voltage: ±20V
– On-state resistance: 41mΩ
– Mounting: SMD
– Gate charge: 50nC
– Kind of channel: enhanced
Specifications
- Manufacturer: VISHAY
- Type of transistor: P-MOSFET x2
- Polarisation: unipolar
- Drain-source voltage: -30V
- Drain current: -5.9A
- Power dissipation: 5W
- Case: SO8
- Gate-source voltage: ±20V
- On-state resistance: 41mΩ
- Mounting: SMD
- Gate charge: 50nC
- Kind of channel: enhanced
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
