Transistor N-MOSFET 200V 31A 200W TO220AB

Manufacturer: Infineon IRF
Transistor type: N-MOSFET
Polarisation: unipolar
Transistor kind: HEXFET
Drain-source voltage: 200V
Drain current: 31A
Power: 200W
Case: TO220AB
Gate-source voltage: 30V
On-state resistance: 82mΩ
Junction-to-case thermal resistance: 0.75K/W
Mounting: THT
Gate charge: 70nC

Additional information
Gross weight: 2.69 g

Information about the packaging of components

Components which are sensitive to electrostatic discharges are packed with due caution in special ESD zone. For this purpose, we use antistatic rails or blisters filled with antistatic ether foam. All products from ESD zone are also packed in shielding bags.