BD246 Silicon PNP TRANSISTOR
€2,50
In stock
Description
BD246 bipolar transistor
Type – p-n-p
Collector-Emitter Voltage: -45 V
Collector-Base Voltage: -55 V
Emitter-Base Voltage: -5 V
Collector Current: -15 A
Collector Dissipation – 80 W
DC Current Gain hfe – 40
Transition Frequency – 3 MHz
Operating and Storage Junction Temperature Range -65 to +150 °C
Package – TO-3P
Specifications
BD246 bipolar transistor
Type - p-n-p
Collector-Emitter Voltage: -45 V
Collector-Base Voltage: -55 V
Emitter-Base Voltage: -5 V
Collector Current: -15 A
Collector Dissipation - 80 W
DC Current Gain hfe - 40
Transition Frequency - 3 MHz
Operating and Storage Junction Temperature Range -65 to +150 °C
Package - TO-3P
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
