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FDP18N50 N-MOSFET 500V 10.8A 235W
€4,00
Out of stock
Description
– Manufacturer: ONSEMI
– Type of transistor: N-MOSFET
– Technology: UniFET™
– Polarisation: unipolar
– Drain-source voltage: 500V
– Drain current: 10.8A
– Power dissipation: 235W
– Case: TO220AB
– Gate-source voltage: ±30V
– On-state resistance: 265mΩ
– Mounting: THT
– Gate charge: 60nC
– Kind of channel: enhancement
Specifications
- Manufacturer: ONSEMI
- Type of transistor: N-MOSFET
- Technology: UniFET™
- Polarisation: unipolar
- Drain-source voltage: 500V
- Drain current: 10.8A
- Power dissipation: 235W
- Case: TO220AB
- Gate-source voltage: ±30V
- On-state resistance: 265mΩ
- Mounting: THT
- Gate charge: 60nC
- Kind of channel: enhancement
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
