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IRFB4410Z N-MOSFET Transistor 100V 97A 230W
€3,25
Out of stock
Description
– Manufacturer: Infineon IRF
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 100V
– Drain current: 97A
– Power dissipation: 230W
– Case: TO220AB
– Gate-source voltage: ±20V
– On-state resistance: 9mΩ
– Mounting: THT
– Gate charge: 83nC
Additional information
– Gross weight: 1.982 g
Specifications
- Manufacturer: Infineon IRF
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 100V
- Drain current: 97A
- Power dissipation: 230W
- Case: TO220AB
- Gate-source voltage: ±20V
- On-state resistance: 9mΩ
- Mounting: THT
- Gate charge: 83nC
Additional information
- Gross weight: 1.982 g
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
