IRFR120NTRPBT N-MOSFET SMD Transistor 100V 9.1A 39W

1,00

Weight0,46 g

In stock

Description

– Manufacturer: Infineon IRF
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 100V
– Drain current: 9.1A
– Power dissipation: 39W
– Case: DPAK
– Mounting: SMD

Additional information
– Gross weight: 0.465 g

Specifications

- Manufacturer: Infineon IRF
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 100V
- Drain current: 9.1A
- Power dissipation: 39W
- Case: DPAK
- Mounting: SMD

Additional information
- Gross weight: 0.465 g

Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0.46 kg