IRFP4332PBF N-MOSFET Transistor 250V 57A 360W TO247AC
€6,00
In stock
Description
– Manufacturer: Infineon IRF
– Type of transistor: N-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: 250V
– Drain current: 57A
– Power dissipation: 360W
– Case: TO247AC
– Gate-source voltage: ±30V
-On-state resistance: 33mΩ
– Mounting: THT
– Gate charge: 99nC
– Kind of channel: enhanced
Additional information
– Gross weight: 5.607 g
Specifications
- Manufacturer: Infineon IRF
- Type of transistor: N-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: 250V
- Drain current: 57A
- Power dissipation: 360W
- Case: TO247AC
- Gate-source voltage: ±30V
-On-state resistance: 33mΩ
- Mounting: THT
- Gate charge: 99nC
- Kind of channel: enhanced
Additional information
- Gross weight: 5.607 g
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
