2SK2845 TRANSISTOR 900V 1A

– Type of Transistor: MOSFET
– Type of Control Channel: N -Channel
– Maximum Power Dissipation Pd: 40 W
– Maximum Drain-Source Voltage |Vds|: 900 V
– Maximum Gate-Source Voltage |Vgs|: 30 V
– Maximum Gate-Threshold Voltage |Vgsth|: 4 V
– Maximum Drain Current |Id|: 1 A
– Maximum Junction Temperature Tj: 150 °C
– Rise Time tr: 20 nS
– Drain-Source Capacitance Cd: 40 pF
– Maximum Drain-Source On-State Resistance Rds: 8 Ohm
– Package: SC64