HUF75645P3 N-MOSFET 100V 65A 310W TO220AB
€6,60
In stock
Description
– Manufacturer: ONSEMI
– Type of transistor: N-MOSFET
– Technology: UltraFET®
– Polarisation: unipolar
– Drain-source voltage: 100V
– Drain current: 65A
– Power dissipation: 310W
– Case: TO220AB
– Gate-source voltage: ±20V
– On-state resistance: 14mΩ
– Mounting: THT
– Gate charge: 238nC
– Kind of channel: enhanced
Specifications
- Manufacturer: ONSEMI
- Type of transistor: N-MOSFET
- Technology: UltraFET®
- Polarisation: unipolar
- Drain-source voltage: 100V
- Drain current: 65A
- Power dissipation: 310W
- Case: TO220AB
- Gate-source voltage: ±20V
- On-state resistance: 14mΩ
- Mounting: THT
- Gate charge: 238nC
- Kind of channel: enhanced
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
