IGBT 600V 44A 115W T03PN TRS

11,00

In stock

SKU: GT50JR22 Category: Tag:
Description

– Manufacturer: TOSHIBA
– Type of transistor: IGBT
– Collector-emitter voltage: 600V
– Collector current: 44A
– Power dissipation: 115W
– Case: TO3PN
– Gate-emitter voltage: ±25V
– Pulsed collector current: 100A
– Mounting: THT
– Turn-on time: 250ns
– Turn-off time: 330ns
– Features of semiconductor devices: integrated anti-parallel diode

Specifications

- Manufacturer: TOSHIBA
- Type of transistor: IGBT
- Collector-emitter voltage: 600V
- Collector current: 44A
- Power dissipation: 115W
- Case: TO3PN
- Gate-emitter voltage: ±25V
- Pulsed collector current: 100A
- Mounting: THT
- Turn-on time: 250ns
- Turn-off time: 330ns
- Features of semiconductor devices: integrated anti-parallel diode

Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg