STP10NK60Z TRANSISTOR 10A 600V 115W 0.75R

– Mounting Style: Through Hole
– Package/Case: TO-220-3
– Transistor Polarity: N-Channel
– Number of Channels: 1 Channel
– Vds – Drain-Source Breakdown Voltage: 600 V
– Id – Continuous Drain Current: 10 A
– Rds On – Drain-Source Resistance: 750 mOhms
– Vgs – Gate-Source Voltage: – 30 V, + 30 V
– Vgs th – Gate-Source Threshold Voltage: 3 V
– Qg – Gate Charge: 70 nC
– Minimum Operating Temperature: – 55 C
– Maximum Operating Temperature: + 150 C
– Pd – Power Dissipation: 115 W
– Configuration: Single
– Fall Time: 30 ns
– Forward Transconductance – Min: 7.8 S
– Height: 9.15 mm
– Length: 10.4 mm
– Product Type: MOSFETs
– Rise Time: 20 ns