Transistor P-MOSFET -20V -6.7A 2.5W
€1,00
In stock
Description
– Manufacturer: Infineon IRF
– Type of transistor: P-MOSFET
– Technology: HEXFET®
– Polarisation: unipolar
– Drain-source voltage: -20V
– Drain current: -6.7A
– Power: 2.5W
– Case: SO8
– Gate-source voltage: ±12V
– On-state resistance: 40mΩ
– Mounting: SMD
– Gate charge: 33.3nC
Additional information
– Gross weight: 0.08 g
Specifications
- Manufacturer: Infineon IRF
- Type of transistor: P-MOSFET
- Technology: HEXFET®
- Polarisation: unipolar
- Drain-source voltage: -20V
- Drain current: -6.7A
- Power: 2.5W
- Case: SO8
- Gate-source voltage: ±12V
- On-state resistance: 40mΩ
- Mounting: SMD
- Gate charge: 33.3nC
Additional information
- Gross weight: 0.08 g
Packaging
Length: 0 mm
Width: 0 mm
Height: 0 mm
Weight: 0 kg
